星空体育频道: 2013-09-01

2013年9月6日星期五

电动汽车充电设置标准通过专家审议

近日，在能源行业电动汽车充电设施标准化技术委员会一届四次会议上，审议通过了《电动汽车非车载充放电装置技术条件》等7项行业标准送审稿，研讨了电动汽车充电、换电、放电标准体系。

会议审查通过了《电动汽车非车载充放电装置技术条件》、《电动汽车电池更换站用充电机技术条件》、《电动汽车充换电设施运行管理规范》、《电动汽车智能充换电服务网络运营管理系统技术规范》、《电动汽车充电站初步设计内容深度规定》、《电动汽车充电设施供电系统技术规范》、《电动汽车充换电设施规划导则》7项标准送审稿，编写单位将根据专家审查意见作进一步修改后，报国家能源局批准发布并实施。

相关人士透露，标委会一届三次会议以来，初步形成了约58项标准的充换电标准体系，目前正在开展与电动汽车充电设施相关的批准计划项目共35项，其中，完成标准编制，已经上报有关部门的标准12项，送审稿7项，征求意见稿1项，大纲3项，准备阶段12项。关键标准的制定取得重要进展，重点围绕充换电设施建设关键标准开展工作，推动了充换电设施接口及通讯协议、充换电站建设、充电设施检验等领域的标准制定工作。在直流充电接口及通信协议、换电国际标准提案等方面取得突破。

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TAG:专家审议通过标准充电设置电动汽车

海力士因火灾暂时停产内存价格大涨

9月4日，SK海力士位于无锡的DRAM(内存芯片)工厂发生爆炸，虽然火灾已于当天下午扑灭，但该工厂的DRAM生产线却被迫中断。受此影响，连续阴跌的国际DRAM颗粒现货价格昨日出现大涨，但业内人士表示，此次火灾对芯片市场不会造成实际影响。

截至目前，SK海力士无锡工厂并未针对爆炸原因和受损情况进行披露。该工厂对外协理部一位相关人士透露，此次火灾对于后续产量的影响暂不好说，工厂恢复运营要一个星期左右。

外媒报道称，SK海力士发言人Seongae Park 指出，无锡厂有望在短期内恢复运作，整体供应量不会受到实质影响。无锡厂仅有一处些微受损，生产设备并无重大损害，至于起火原因则还在调查中。

韩国SK海力士是全球第二大DRAM制造商，截至2013年第二季度，该公司在全球DRAM市场的占有率为30%。据了解，SK海力士无锡厂每月晶圆投片量高达15万片，占全球DRAM供应约为12%～15%。而DRAM工厂是24小时运行，一旦发生火灾等事故，投入生产的晶片可能无法使用。有外媒报道称，全球DRAM大厂三星、美光及南科等相继暂停报价，并停止接单。

目前，正值PC、智能手机和平板电脑竞相推出新机抢市，因此，业界担忧此次火灾可能导致DRAM短期供应短缺，甚至造成DRAM现货价格飙升。

不过，一位芯片业界人士对记者分析，无锡海力士只从事测试封装环节的生产，火灾可能只会对设备和原材料造成损坏。如果火灾发生在台湾台积电工厂，则会对芯片价格影响大。

不过，DRAM现货价格以及相关企业二级市场的股价依然受到一定影响。集邦科技旗下DRAM价格网站显示，国际DRAM颗粒现货价格昨日出现大涨，2Gb DDR3颗粒涨价幅度从15.56%到17.28%不等。此外，移动设备闪存制造商SanDisk昨日股价大涨3.31%，美国最大的电脑内存芯片厂商美光科技也大涨5.3%。

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TAG:内存价格停产暂时火灾力士

2013年9月2日星期一

Spread of crop pests threatens global food security as Earth warms

Sep. 1, 2013 — A new study has revealed that global warming is resulting in the spread of crop pests towards the North and South Poles at a rate of nearly 3 km a year.

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The study, published in the journal Nature Climate Change and carried out by researchers at the University of Exeter and the University of Oxford, shows a strong relationship between increased global temperatures over the past 50 years and expansion in the range of crop pests.

Currently 10-16% of global crop production is lost to pests. Crop pests include fungi, bacteria, viruses, insects, nematodes, viroids and oomycetes. The diversity of crop pests continues to expand and new strains are continually evolving. Losses of major crops to fungi, and fungi-like microorganisms, amount to enough to feed nearly nine percent of today's global population. The study suggests that these figures will increase further if global temperatures continue to rise as predicted.

The spread of pests is caused by both human activities and natural processes but is thought to be primarily the result of international freight transportation. The study suggests that the warming climate is allowing pests to become established in previously unsuitable regions. For example, warming generally stimulates insect herbivory at higher latitudes as seen in outbreaks of the Mountain pine beetle (Dendroctonus ponderosae) that has destroyed large areas of pine forest in the US Pacific Northwest. In addition, the rice blast fungus which is present in over 80 countries, and has a dramatic effect both on the agricultural economy and ecosystem health, has now moved to wheat. Considered a new disease, wheat blast is sharply reducing wheat yields in Brazil.

Dr Dan Bebber from the University of Exeter said: "If crop pests continue to march polewards as Earth warms the combined effects of a growing world population and the increased loss of crops to pests will pose a serious threat to global food security."

Professor Sarah Gurr from the University of Exeter (previously at the University of Oxford) said: "Renewed efforts are required to monitor the spread of crop pests and to control their movement from region to region if we are to halt the relentless destruction of crops across the world in the face of climate change."

The study used published observations of the distribution of 612 crop pests collected over the past 50 years. It revealed that the movement of pests north and south towards the poles, and into new previously un-colonised regions, corresponds to increased temperatures during that period.

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2013年9月1日星期日

Solar energy: A richer harvest on the horizon

Aug. 31, 2013 — Semiconductor nanostructures are poised to play a big role in future solar-powered hydrogen generation systems, according to a new study by researchers at the A*STAR Institute of High Performance Computing1. Hui Pan and Yong-Wei Zhang report that model interfaces made from gallium nitride (GaN) and zinc oxide (ZnO) semiconductors have tunable magnetic and light-harvesting capabilities -- factors that can greatly improve the photocatalytic transformation of water into hydrogen fuel.

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Most photoelectrochemical cells use titanium dioxide electrodes to absorb light and split water molecules into hydrogen and oxygen gas. But because this mineral has a large bandgap -- a measure of energy needed to initiate photoreactions -- these devices respond only to a tiny fraction of the solar spectrum. A promising way to boost this efficiency is with 'superlattice' materials that stack two different semiconductors into alternate, nanometer-thin layers. The two-dimensional channels that emerge from superlattices resemble conductive nanowires for swift charge-carrier movement. Bandgaps in these hetero-nanostructures have a demonstrated dependence on semiconductor composition and layer thickness.

Pan and Zhang investigated superlattices based on stacked GaN and ZnO layers, two semiconductors with similar electronic and structural properties that are widely used in optoelectronic devices. Using density functional theory calculations, they optimized a periodic GaN-ZnO model superlattice (see image). These computations, which describe the charge and electron spin states of materials, showed that the two semiconductor layers formed crystalline nanowire arrangements with no magnetic characteristics.

The duo then systematically introduced small defects -- atomic substitutions that slightly disrupt semiconductor crystallinity -- into the GaN-ZnO superlattice. To Pan and Zhang's surprise, they observed significant magnetism at several types of defect interface. According to Pan, this extraordinary activity is due to 'polar discontinuities' that form when positively charged defects partially neutralize negative charges at Ga-O interface points. Unpaired electrons then accumulate around Zn-N connections and generate magnetic forces that can boost charge separation and mobility during the reaction known as photocatalysis.

The researchers also found that engineered polar discontinuities could significantly alter semiconductor bandgaps by generating intermediate energy levels. These zones act as 'stepping stones' that make it easier for photons, or light-transmitting particles, to excite electrons for water-splitting reactions. Pan notes that once these intriguing properties of GaN-ZnO nanostructures are verified through laboratory studies, the materials may find application in energy-harvesting solar cells. "If this design proves efficient in both theory and experiment, we would then look for commercial applications by collaborating with industry," he says.

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Magnetic materials: Forging ahead with a back-to-basics approach

Aug. 31, 2013 — Scientists have recently started to explore the possibility of using an intrinsic property of the electron known as spin for processing and storing information. Magnetic fields can influence the dynamics of electron spin, so harnessing this potential relies on precision engineering of crystalline storage materials. Chee Kwan Gan and co‐workers at the A*STAR Institute of High Performance Computing and the A*STAR Data Storage Institute in Singapore have used theoretical calculations to show how the magnetic characteristics of specific materials can be controlled at the atomic level.

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Their results could lead to novel magnetic recording devices.

One promising route to such spintronic devices is to design structures consisting of alternating layers of different magnetic atoms. The strength of the magnetic influence is stronger in the direction of the multilayer stack than it is parallel to the planes of the atoms. This so-called perpendicular magnetic anisotropy is useful for spintronic memory devices because it allows a greater storage density than a conventional electronic device.

The properties of these structures, however, are highly sensitive to the precise arrangement of the crystal. Just one misplaced layer of atoms -- a stacking fault -- can noticeably alter device performance (see image). Previous studies usually ignored these special defects, "but nature sometimes makes 'mistakes'," explains Gan. "It is important to understand these defects and subsequently use them to control the material's physical properties."

Gan and his team went back to basics to better understand how atom-level imperfections affect the properties of these multilayers. They used a powerful mathematical approach known as density functional theory. This approach uses only fundamental equations from quantum mechanics to model the behavior of electrons in these structures, without requiring any prior assumptions.

The researchers modeled a material consisting of alternating layers of cobalt and palladium atoms. Multilayers of these atoms have previously exhibited a large perpendicular magnetic anisotropy when the cobalt layers are less than 0.8 nanometers thick. Gan and co-workers then assessed how stacking faults and the ratio of cobalt to palladium atoms affected this anisotropy. Their results showed that a stacking fault could enhance the magnetic anisotropy in structures with a relatively thick cobalt layer. They also found that the anisotropy increased almost linearly with increasing cobalt content.

High magnetic anisotropy materials have potential for use in the next generation of ultrafast and high-capacity magnetic random-access memory, Gan explains. The improved understanding of these materials from this research will guide the way to realizing such devices.

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High dose statins prevents dementia, study suggests

Dr Lin said: "Statins are widely used in the older population to reduce the risk of cardiovascular disease. But recent reports of statin-associated cognitive impairment have led the US Food and Drug Administration (FDA) to list statin-induced cognitive changes, especially for the older population, in its safety communications."

He added: "Previous studies had considered statin therapy to exert a beneficial effect on dementia. But few large-scale studies have focused on the impact of statins on new-onset, non-vascular dementia in the geriatric population."

Accordingly, the current study examined whether statin use was associated with new diagnoses of dementia. The researchers used a random sample of 1 million patients covered by Taiwan's National Health Insurance. From this they identified 57,669 patients aged >65 years who had no history of dementia in 1997 and 1998. The analysis included pre-senile and senile dementia but excluded vascular dementia.

There were 5,516 new diagnoses of dementia during approximately 4.5 years of follow-up. The remaining 52,153 patients aged >65 formed the control group. Subjects were divided into tertiles according to their mean daily equivalent1 dosage and total (across the entire follow up period) equivalent dosage.

The adjusted hazard ratios (HRs) for dementia were significantly inversely associated with increased daily or total equivalent statin dosage. The HRs for the three tertiles of mean equivalent daily dosage (lowest to highest) were 0.622, 0.697 and 0.419 vs control (p<0.001 for trend). The HRs for the three tertiles of total equivalent dosage (lowest to highest) were 0.773, 0.632 and 0.332 vs control (p<0.001 for trend). The protective effect of statins remained in different age, gender and cardiovascular risk subgroups.

Dr Lin said: "The adjusted risks for dementia were significantly inversely associated with increased total or daily equivalent statin dosage. Patients who received the highest total equivalent doses of statins had a 3-fold decrease in the risk of developing dementia. Similar results were found with the daily equivalent statin dosage."

He added: "It was the potency of the statins rather than their solubility (lipophilic or hydrophilic) which was a major determinant in reducing dementia. High potency statins such as atorvastatin and rosuvastatin showed a significant inverse association with developing dementia in a dose-response manner. Higher doses of high potency statins gave the strongest protective effects against dementia."

Dr Lin continued: "The results were consistent when analysing daily doses of different kinds of statins. Almost all the statins (except lovastatin) decreased the risk for new onset dementia when taken at higher daily doses. A high mean daily dosage of lovastatin was positively associated with the development of dementia, possibly because lovastatin is a lipophilic statin while the anti-inflammatory cholesterol lowering effect of lovastatin is not comparable to that of atorvastatin and simvastatin."

Dr Lin concluded: "To the best of our knowledge, this was the first large-scale, nation-wide study which examined the effect of different statins on new onset dementia (except vascular dementia) in an elderly population. We found that high doses of statins, particularly high potency statins, prevent dementia."

Notes

1. Equivalent dosages are used when comparing the effects of different drugs. Each statin was assigned an appropriate equivalent dose according to the following formula: lovastatin 40mg = pravastatin 40mg = simvastatin 20mg = atorvastatin 10mg = fluvastatin 80mg = rosuvastatin 5mg.

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